Manufacturer | Part # | Datasheet | Description |
NXP Semiconductors |
MMG2401
|
468Kb / 12P |
Indium Gallium Phosphorus HBT
Rev. 3, 5/2006 |
Gilway Technical Lamp |
GHB-RA-B-G
|
88Kb / 3P |
These small chip-type LEDs utilize high efficient and high brightness InGaN material to deliver competitively priced high performance blue and green.
|
Freescale Semiconductor... |
MMG2401NR2
|
172Kb / 12P |
Indium Gallium Phosphorus HBT - WLAN Power Amplifier
|
Kingbright Corporation |
APT2012SGC
|
104Kb / 4P |
Gallium Phosphide Green Light Emitting Diode.
|
WP710A10YD5V
|
312Kb / 7P |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Vishay Siliconix |
TLHE44R1S2-26
|
106Kb / 5P |
AlInGaP technology
Rev. 1.4, 14-Oct-14 |
TLHE42T2V1
|
107Kb / 5P |
AlInGaP technology
Rev. 1.2, 14-Oct-14 |
TLLE4401
|
110Kb / 6P |
AlInGaP technology
Rev. 1.5, 14-Oct-14 |
Kingbright Corporation |
PSA08-11EWA
|
73Kb / 3P |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
WP7113YD5V
|
310Kb / 7P |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|