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GS864418E-V Datasheet (PDF) - GSI Technology

GS864418E-V Datasheet PDF - GSI Technology
Part # GS864418E-V
Download  GS864418E-V Download

File Size   1387.29 Kbytes
Page   32 Pages
Manufacturer  GSI [GSI Technology]
Direct Link  http://www.gsitechnology.com
Logo GSI - GSI Technology
Description 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs

GS864418E-V Datasheet (PDF)

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GS864418E-V Datasheet PDF - GSI Technology

Part # GS864418E-V
Download  GS864418E-V Click to download

File Size   1387.29 Kbytes
Page   32 Pages
Manufacturer  GSI [GSI Technology]
Direct Link  http://www.gsitechnology.com
Logo GSI - GSI Technology
Description 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs

GS864418E-V Datasheet (HTML) - GSI Technology

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About GSI Technology


GSI Technology is a semiconductor company that designs, develops, and markets high-performance memory products for networking, telecommunications, and military applications. The company was founded in 1995 and is headquartered in Sunnyvale, California.

GSI Technology's products include static random-access memory (SRAM) devices, which are used for high-speed memory access in networking and telecommunications equipment, as well as in military and aerospace systems. The company's SRAMs feature low latency and high bandwidth, which makes them suitable for applications that require fast and reliable memory access.

In addition to its memory products, GSI Technology also offers customized solutions for customers with specific requirements. The company's design and development capabilities allow it to create products tailored to customer needs, including specialized memory architectures and custom packaging options.

GSI Technology has a global customer base, with products sold in North America, Asia, and Europe. The company's customers include original equipment manufacturers (OEMs) and other companies in the networking, telecommunications, military, and aerospace industries.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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