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BDX53BFP Datasheet (PDF) - STMicroelectronics

BDX53BFP Datasheet PDF - STMicroelectronics
Part # BDX53BFP
Download  BDX53BFP Download

File Size   90.7 Kbytes
Page   4 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description SILICON POWER DARLINGTON TRANSISTOR

BDX53BFP Datasheet (PDF)

Go To PDF Page Download Datasheet
BDX53BFP Datasheet PDF - STMicroelectronics

Part # BDX53BFP
Download  BDX53BFP Click to download

File Size   90.7 Kbytes
Page   4 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description SILICON POWER DARLINGTON TRANSISTOR

BDX53BFP Datasheet (HTML) - STMicroelectronics

BDX53BFP Datasheet HTML 1Page - STMicroelectronics BDX53BFP Datasheet HTML 2Page - STMicroelectronics BDX53BFP Datasheet HTML 3Page - STMicroelectronics BDX53BFP Datasheet HTML 4Page - STMicroelectronics

BDX53BFP Product details

DESCRIPTION

The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in T0-220FP fully molded isolated package. It is intented for use in hammer

drivers, audio amplifiers and other medium power linear and switching applications.



APPLICATIONS:

■ GENERAL PURPOSE SWITCHING AND AMPLIFIER

■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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