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K9WAG08U1A-Y - 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory - Samsung semiconductor |
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Related Electronics Part Number |
| Part Number | Components Description | Manufacturer |
| K9WAG08U1A_067 | 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory | Samsung semiconductor |
| NAND01G-B2B | 1 Gbit 2 Gbit 2112 Byte/1056 Word Page 1.8V/3V NAND Flash Memory | STMicroelectronics |
| K8D6X16UTM_06 | 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory | Samsung semiconductor |
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| HY27US08281A | 128Mbit 16Mx8bit / 8Mx16bit NAND Flash Memory | Hynix Semiconductor |
| NAND04GA3C2A | 4Gbit 2112 Byte Page 3V Multi-level NAND Flash Memory | STMicroelectronics |
| HN29WT800 | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory | Hitachi Semiconductor |
| M25P64_07 | 64 Mbit Low Voltage Serial Flash Memory With 50MHz SPI Bus Interface | STMicroelectronics |
| CAT28F001_05 | 1 Megabit CMOS Boot Block Flash Memory | Catalyst Semiconductor |
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| K9WAG08U1A-Y Equivalent | K9WAG08U1A-Y Application Notes | K9WAG08U1A-Y Data Sheet | K9WAG08U1A-Y component | K9WAG08U1A-Y Fiche Technique | K9WAG08U1A-Y Circuit |
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