Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp |
NE55410GR
|
317Kb / 15P |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
NEC |
NE55410GR
|
186Kb / 13P |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Labs |
NE55410GR
|
558Kb / 13P |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Technology Corp |
NES1823S-45
|
239Kb / 10P |
GaAs FET 45 W L, S-BAND SINGLE-END POWER GaAs FET
2004 |
NES1823S-90
|
242Kb / 10P |
GaAs FET 90 W L, S-BAND SINGLE-END POWER GaAs FET
2004 |
NEC |
NE6501077
|
37Kb / 6P |
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
Sanyo Semicon Device |
LA4278
|
74Kb / 6P |
10 W 2-Channel Power Amplifier
|
NEC |
NE6500496
|
37Kb / 6P |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
Renesas Technology Corp |
NE5531079A
|
240Kb / 11P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5531079A
|
382Kb / 8P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|