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SST39LF200A Datasheet (PDF) - Silicon Storage Technology, Inc

SST39LF200A Datasheet PDF - Silicon Storage Technology, Inc
Part # SST39LF200A_07
Download  SST39LF200A Download

File Size   843.51 Kbytes
Page   31 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

SST39LF200A Datasheet (PDF)

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SST39LF200A Datasheet PDF - Silicon Storage Technology, Inc

Part # SST39LF200A_07
Download  SST39LF200A Click to download

File Size   843.51 Kbytes
Page   31 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

SST39LF200A Datasheet (HTML) - Silicon Storage Technology, Inc

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SST39LF200A Product details

PRODUCT DESCRIPTION
The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

FEATURES:
• Organized as 128K x16 / 256K x16 / 512K x16
• Single Voltage Read and Write Operations
   – 3.0-3.6V for SST39LF200A/400A/800A
   – 2.7-3.6V for SST39VF200A/400A/800A
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption(typical values at 14 MHz)
   – Active Current: 9 mA (typical)
   – Standby Current: 3 µA (typical)
• Sector-Erase Capability
   – Uniform 2 KWord sectors
• Block-Erase Capability
   – Uniform 32 KWord blocks
• Fast Read Access Time
   – 45 and 55 ns for SST39LF200A
   – 55 ns for SST39LF400A/800A
   – 70 ns for SST39VF200A/400A/800A
• Latched Address and Data
• Fast Erase and Word-Program
   – Sector-Erase Time: 18 ms (typical)
   – Block-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Word-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
      2 seconds (typical) for SST39LF/VF200A
      4 seconds (typical) for SST39LF/VF400A
      8 seconds (typical) for SST39LF/VF800A
• Automatic Write Timing
   – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 48-lead TSOP (12mm x 20mm)
   – 48-ball TFBGA (6mm x 8mm)
   – 48-ball WFBGA (4mm x 6mm)
   – 48-bump XFLGA (4mm x 6mm) for 4M and 8M
• All non-Pb (lead-free) devices are RoHS compliant




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About Silicon Storage Technology, Inc


Silicon Storage Technology, Inc. (SST) was an American technology company that specialized in the design and manufacture of non-volatile memory solutions, including flash memory and microcontrollers.
The company was founded in 1991 and had its headquarters in Sunnyvale, California.
SST was known for its innovative technology and high-quality products, and it had a strong reputation in the memory and storage industry.
In 2010, SST was acquired by Microchip Technology Inc., a leading provider of microcontroller and analog semiconductors.
Today, SST operates as a subsidiary of Microchip and continues to provide non-volatile memory solutions for a variety of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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