DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.

■ NPN TRANSISTOR
■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED

APPLICATIONS:
■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS