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TSTS7500 Datasheet (PDF) - Vishay Siliconix

TSTS7500 Datasheet PDF - Vishay Siliconix
Part # TSTS7500_08
Download  TSTS7500 Download

File Size   146.43 Kbytes
Page   5 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

TSTS7500 Datasheet (PDF)

Go To PDF Page Download Datasheet
TSTS7500 Datasheet PDF - Vishay Siliconix

Part # TSTS7500_08
Download  TSTS7500 Click to download

File Size   146.43 Kbytes
Page   5 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

TSTS7500 Datasheet (HTML) - Vishay Siliconix

TSTS7500_08 Datasheet HTML 1Page - Vishay Siliconix TSTS7500_08 Datasheet HTML 2Page - Vishay Siliconix TSTS7500_08 Datasheet HTML 3Page - Vishay Siliconix TSTS7500_08 Datasheet HTML 4Page - Vishay Siliconix TSTS7500_08 Datasheet HTML 5Page - Vishay Siliconix



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About Vishay Siliconix


Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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