Introduction
The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), code division multiple access (CDMA), global system for mobile communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.

CDMA Features
   Typical two carrier CDMA performance:
   VDD = 28 V, IDQ = 1600 mA, POUT = 38 W,
   f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95/97
   CDMA pilot, sync, paging, traffic codes 8—13
   (9 channels) 1.2288 MHz channel bandwidth (BW),
   adjacent channel power ration (ACPR) measured
   over a 30 kHz BW at f1 – 885 kHz, f2 + 885 kHz.
   Distortion products measured over 1.2288 MHz
   channel BW at f1 – 2.5 MHz, f2 + 2.5 MHz.
   Peak/avg = 9.72 dB @ 0.01% probability on
   CCDF:
   — Output power: 38 W.
   — Power gain: 14.5 dB.
   — Efficiency: 26%.
   — IM3: –33 dBc.
   — ACPR: –48.5 dBc
   — Return loss: –12 dB.

Device Performance Features
   High-reliability, gold-metalization process.
   Hot carrier injection (HCI) induced bias drift of <5%
      over 20 years.
   Internally matched.
   High gain, efficiency, and linearity.
   Integrated ESD protection.
   Device can withstand a 10:1 voltage standing wave
      ratio (VSWR) at 28 Vdc, 1960 MHz, 180 W output
      power pulsed 4 µs at 10% duty.
   Large signal impedance parameters available.