CGA-3318Z Datasheet(PDF) - RF Micro Devices

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CGA-3318Z Datasheet (PDF) - RF Micro Devices

CGA-3318Z Datasheet PDF - RF Micro Devices


Part #	CGA-3318Z

Download	CGA-3318Z Download

File Size	297.05 Kbytes

Page	10 Pages

Manufacturer	RFMD [RF Micro Devices]

Direct Link	http://www.rfmd.com

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Description

DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER

CGA-3318Z Datasheet (PDF)

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CGA-3318Z Datasheet PDF - RF Micro Devices


Part #	CGA-3318Z

Download	CGA-3318Z Click to download

File Size	297.05 Kbytes

Page	10 Pages

Manufacturer	RFMD [RF Micro Devices]

Direct Link	http://www.rfmd.com

Logo

Description	DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER

CGA-3318Z Datasheet (HTML) - RF Micro Devices

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CGA-3318Z Product details

Product Description
RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The hetero-junction increases breakdown voltage and minimizes leakage current between junctions. The CGA-3318Z contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push-pull configuration.

Features
■ Lead-Free, RoHS Compliant, and Green Packaging
■ Excellent CSO/CTB/XMOD Performance at +34dBmV Output Power Per Tone
■ Dual Devices in Each SOIC-8 Package Simplify Push-Pull Configuration PC Board Layout
■ 5MHz to 900MHz Operation

Applications
■ CATV Head End Driver and Predriver Amplifier
■ CATV Line Driver Amplifier

Similar Part No. - CGA-3318Z

Manufacturer	Part #	Datasheet	Description
SIRENZA MICRODEVICES	CGA-3318Z	236Kb / 8P	Dual CATV Broadband High Linearity SiGe HBT Amplifier
RF Micro Devices	CGA-3318Z	417Kb / 10P	DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER

Similar Description - CGA-3318Z

Manufacturer	Part #	Datasheet	Description
SIRENZA MICRODEVICES	CGA-3318	236Kb / 8P	Dual CATV Broadband High Linearity SiGe HBT Amplifier
RF Micro Devices	CGA-3318Z	417Kb / 10P	DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER
Stanford Microdevices	CGA-3318	355Kb / 8P	Dual CATV Broadband High Linearity SiGe HBT Amplifier
Stanford Microdevices	CGA-6618	323Kb / 5P	DUAL CATV BROADBAND HIGH LINEARITY GAAS HBT AMPLIFIER
RF Micro Devices	CGA-6618	427Kb / 10P	DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER
SIRENZA MICRODEVICES	CGA-6618	297Kb / 8P	Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier
RF Micro Devices	RF3315	380Kb / 14P	BROADBAND HIGH LINEARITY AMPLIFIER
RF Micro Devices	RF3315	223Kb / 12P	BROADBAND HIGH LINEARITY AMPLIFIER
Freescale Semiconductor...	MMG3H21NT1	287Kb / 15P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
Freescale Semiconductor...	MMG3003NT1	322Kb / 16P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier

About RF Micro Devices

RF Micro Devices (RFMD) was an American company that specialized in the design and manufacture of radio frequency (RF) components and solutions for wireless communications. The company was founded in 1991 and was headquartered in Greensboro, North Carolina. RFMD provided a wide range of products including power amplifiers, transceivers, filters, and other RF components that were used in mobile devices, Wi-Fi and Bluetooth modules, and other wireless systems.

RFMD was known for its expertise in RF technology and its ability to provide innovative and high-performance products. The company had a strong focus on research and development and was actively involved in the development of new technologies and solutions for the wireless industry. RFMD's products were widely used in a variety of applications and helped support the growth of the wireless industry.

In 2015, RFMD was acquired by Skyworks Solutions, Inc., a leading provider of high-performance analog semiconductors. The acquisition allowed Skyworks to expand its product portfolio and offerings in the RF market and further strengthen its position in the wireless industry.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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