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PAT2010E1002DST1 Datasheet (PDF) - Vishay Siliconix

PAT2010E1002DST1 Datasheet PDF - Vishay Siliconix
Part # PAT2010E1002DST1
Download  PAT2010E1002DST1 Download

File Size   88.63 Kbytes
Page   3 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Precision Automotive Thin Film Chip Resistors, AEC-Q200 Qualified, 2 kV ESD Rating

PAT2010E1002DST1 Datasheet (PDF)

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PAT2010E1002DST1 Datasheet PDF - Vishay Siliconix

Part # PAT2010E1002DST1
Download  PAT2010E1002DST1 Click to download

File Size   88.63 Kbytes
Page   3 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Precision Automotive Thin Film Chip Resistors, AEC-Q200 Qualified, 2 kV ESD Rating

PAT2010E1002DST1 Datasheet (HTML) - Vishay Siliconix

PAT2010E1002DST1 Datasheet HTML 1Page - Vishay Siliconix PAT2010E1002DST1 Datasheet HTML 2Page - Vishay Siliconix PAT2010E1002DST1 Datasheet HTML 3Page - Vishay Siliconix



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About Vishay Siliconix


Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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