NX6414EH Datasheet(PDF) - Renesas Technology Corp

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NX6414EH Datasheet (PDF) - Renesas Technology Corp

NX6414EH Datasheet PDF - Renesas Technology Corp


Part #	NX6414EH

Download	NX6414EH Download

File Size	173.16 Kbytes

Page	8 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Description

LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION

NX6414EH Datasheet (PDF)

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NX6414EH Datasheet PDF - Renesas Technology Corp


Part #	NX6414EH

Download	NX6414EH Click to download

File Size	173.16 Kbytes

Page	8 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

Description	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION

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NX6414EH Product details

DESCRIPTION
The NX6414EH is a 1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

FEATURES
• Optical output power Po = 14.0 mW
• Low threshold current lth = 10 mA
• Differential efficiency ηd = 0.25 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.7 mm

APPLICATIONS
• Gigabit Ethernet
• Point to Point

Similar Part No. - NX6414EH

Manufacturer	Part #	Datasheet	Description
California Eastern Labs	NX6414EH	173Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE
Renesas Technology Corp	NX6414EH	165Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION

Similar Description - NX6414EH

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	NX6414EH	165Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION
California Eastern Labs	NX6414EH	173Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE
Renesas Technology Corp	NX6410GH	178Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
	NX6411GH	170Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
	NX6411GH	177Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
	NX6410GH	170Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
	NX6314EH	205Kb / 7P	LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
	NX6511GH	190Kb / 7P	LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
	NX6510GH	207Kb / 7P	LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
	NX7437	186Kb / 11P	LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION

About Renesas Technology Corp

Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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