Product Description The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. The transistor exhibits low 1/f noise and provides +13 dBm typical output power at VCE of 3V and IC equal to 20 mA. It is easily operated from a single supply voltage with appropriate external passive components. The silicon germanium technology used in this device provides outstanding high-frequency performance combined with high thermal conductivity and superior reliability under harsh operating and storage conditions. A complete mechanical description of the transistor is available under SiGe Semiconductor Document 07MS001. Features ◾ Low 1/f noise: -142 dBc/Hz at 100 Hz offset ◾ Phase noise: -167 dBc/Hz at 100 kHz offset ◾ Output power up to +13 dBm ◾ Operation down to 1 volt, 2 mA ◾ Gold bump pads for wire bond or flip chip (for direct die attachment) Applications ◾ Low phase noise oscillators up to 16 GHz ◾ VCO’s, DRO’s and YIG oscillators ◾ Point-to-point radios ◾ Satellite communications ◾ Fiber optics, OC-192 and OC-768 ◾ Local Multipoint Distribution Systems, LMDS
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