FQT4N20L Datasheet(PDF)

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FQT4N20L Datasheet (PDF) - Fairchild Semiconductor


Part #	FQT4N20L

Download	FQT4N20L Download

File Size	627.52 Kbytes

Page	8 Pages

Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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Description

200V LOGIC N-Channel MOSFET

FQT4N20L Datasheet (PDF)

Download Datasheet


Part #	FQT4N20L

Download	FQT4N20L Click to download

File Size	627.52 Kbytes

Page	8 Pages

Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

Logo

Description	200V LOGIC N-Channel MOSFET

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FQT4N20L Product details

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features
• 0.85 A, 200 V, RDS(on)=1.35 Ω(Typ.)@VGS=10 V, ID=0.425 A
• Low Gate Charge (Typ. 4 nC)
• Low Crss (Typ. 6 pF)
• 100% Avalanche Tested
• Low Level Gate Drive Requirments Allowing Direct Operation From Logic Drives

Similar Part No. - FQT4N20L

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Similar Description - FQT4N20L

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About Fairchild Semiconductor

Fairchild Semiconductor was a pioneering semiconductor company that was founded in the late 1950s.
The company was known for its innovation in the development of the first commercial transistor and for its contributions to the advancement of the integrated circuit technology.
Fairchild became a leading supplier of power semiconductors, analog and mixed-signal integrated circuits, and other semiconductor products.
The company was acquired by ON Semiconductor in 2016 and its products and technologies continue to be developed and sold under the ON Semiconductor brand.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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