General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).

Features
• –3.0 A, –60 V. RDS(ON) = 150 mΩ @ VGS = –10 V RDS(ON) = 240 mΩ @ VGS = –4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

Applications
• Power management
• Load switch
• Battery protection