IRG4RC10UTRPBF Datasheet(PDF) - International Rectifier

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IRG4RC10UTRPBF Datasheet (PDF) - International Rectifier

IRG4RC10UTRPBF Datasheet PDF - International Rectifier


Part #	IRG4RC10UTRPBF

Download	IRG4RC10UTRPBF Download

File Size	654.18 Kbytes

Page	10 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Description

Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation

IRG4RC10UTRPBF Datasheet (PDF)

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IRG4RC10UTRPBF Datasheet PDF - International Rectifier


Part #	IRG4RC10UTRPBF

Download	IRG4RC10UTRPBF Click to download

File Size	654.18 Kbytes

Page	10 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

Description	Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation

IRG4RC10UTRPBF Datasheet (HTML) - International Rectifier

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IRG4RC10UTRPBF Product details

Features
• UltraFast: Optimized for high operating frequencies (8-40 kHz in hard swiching, > 200 kHz in resonant mode)
• Generation 4 IGBT design provides tigher parameter distribution and higher efficiency than previous generation
• Industry standard TO-252AA package
• Lead-Free

Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions

Similar Part No. - IRG4RC10UTRPBF

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRG4RC10U	131Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
	IRG4RC10UD	191Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
	IRG4RC10UDPBF	308Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
	IRG4RC10UDPBF	308Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
	IRG4RC10UDPBF	308Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Similar Description - IRG4RC10UTRPBF

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About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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