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BFP640F Datasheet (PDF) - Infineon Technologies AG

BFP640F Datasheet PDF - Infineon Technologies AG
Part # BFP640F
Download  BFP640F Download

File Size   190.83 Kbytes
Page   6 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description NPN Silicon Germanium RF Transistor

BFP640F Datasheet (PDF)

Go To PDF Page Download Datasheet
BFP640F Datasheet PDF - Infineon Technologies AG

Part # BFP640F
Download  BFP640F Click to download

File Size   190.83 Kbytes
Page   6 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description NPN Silicon Germanium RF Transistor

BFP640F Datasheet (HTML) - Infineon Technologies AG

BFP640F Datasheet HTML 1Page - Infineon Technologies AG BFP640F Datasheet HTML 2Page - Infineon Technologies AG BFP640F Datasheet HTML 3Page - Infineon Technologies AG BFP640F Datasheet HTML 4Page - Infineon Technologies AG BFP640F Datasheet HTML 5Page - Infineon Technologies AG BFP640F Datasheet HTML 6Page - Infineon Technologies AG

BFP640F Product details

Product Brief
The BFP640F is linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA. With its high linearity at currents as low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 40 GHz, hence the device offers high power gain at frequencies up to 8 GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads.

Features
• Linear low noise amplifier based on Infineon´s reliable,
   high volume SiGe:C technology
• High linearity OIP3 = 27.5 dBm @ 5.5 GHz, 3 V, 25 mA
• High transition frequency fT = 42 GHz @ 3 V, 30 mA
• NFmin = 0.75 dB @ 3.5 GHz, 3 V, 6 mA
• Maximum power gain Gma = 16.5 dB @ 3.5 GHz, 3 V, 25 mA
• Low power consumption, ideal for mobile applications
• Very common as GPS low noise amplifier, see respective
   application notes on Infineon internet page
• Easy to use Pb-free (RoHS compliant) and halogen-free
   standard package with visible leads
• Qualification report according to AEC-Q101 available

Applications
As Low Noise Amplifier (LNA) in
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz, UWB, Bluetooth
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier




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About Infineon Technologies AG


Infineon Technologies is a leading global semiconductor manufacturer that specializes in providing power management, security, and control solutions for a variety of industries such as automotive, industrial, and communication systems.
The company was founded in 1999 and is headquartered in Neubiberg, Germany.
Infineon offers a wide range of products including microcontrollers, power semiconductors, sensors, and other integrated circuits.
The company has a strong presence in the global market, with operations and facilities in various countries across the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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