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K7A163601A - 512Kx36 & 1Mx18 Synchronous SRAM - Samsung semiconductor |
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Related Electronics Part Number |
| Part Number | Components Description | Manufacturer |
| KM736V989 | 512Kx36 & 1Mx18 Synchronous SRAM | Samsung semiconductor |
| K7R163684B | 512Kx36 & 1Mx18 QDR II b4 SRAM | Samsung semiconductor |
| K7Q161882 | 512Kx36 & 1Mx18 QDR b2 SRAM | Samsung semiconductor |
| K7Q161862 | 512Kx36 & 1Mx18 QDRTM b2 SRAM | Samsung semiconductor |
| K7R161882B | 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM | Samsung semiconductor |
| K7J161882B | 512Kx36 & 1Mx18 DDR II SIO b2 SRAM | Samsung semiconductor |
| K7Q163652A | 512Kx36 & 1Mx18 QDRTM b2 SRAM | Samsung semiconductor |
| A63G7332 | 128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output | AMIC Technology |
| GS8160Z18 | 18Mb Pipelined and Flow Through Synchronous NBT SRAM | GSI Technology |
| IDT71V633 | 64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter Single Cycle Deselect | Integrated Device Technology |
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| K7A163601A Equivalent | K7A163601A Application Notes | K7A163601A Data Sheet | K7A163601A component | K7A163601A Fiche Technique | K7A163601A Circuit |
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