2SA1822 Datasheet(PDF)

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2SA1822 Datasheet (PDF) - Inchange Semiconductor Company Limited


Part #	2SA1822

Download	2SA1822 Download

File Size	267.53 Kbytes

Page	2 Pages

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Description

Silicon PNP Power Transistor

2SA1822 Datasheet (PDF)

Download Datasheet


Part #	2SA1822

Download	2SA1822 Click to download

File Size	267.53 Kbytes

Page	2 Pages

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

Logo

Description	Silicon PNP Power Transistor

2SA1822 Datasheet (HTML) - Inchange Semiconductor Company Limited

2SA1822 Datasheet HTML 1Page - Inchange Semiconductor Company Limited

2SA1822 Datasheet HTML 2Page - Inchange Semiconductor Company Limited

2SA1822 Product details

DESCRIPTION
• High Collector-Emitter Breakdown Voltage
• Excellent switching time
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
• High voltage switching applications.
• High speed DC-DC converter application

Similar Part No. - 2SA1822

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	2SA1822	152Kb / 3P	TRANSISTOR (HIGH VOLTAGE SWITCHING, SPEED DC-DC CONVERTER APPLICATIONS)

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Similar Description - 2SA1822

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About Inchange Semiconductor Company Limited

Inchange Semiconductor Company Limited is a Chinese semiconductor company that was founded in 1997.

The company provides a wide range of products including discrete and analog power devices, and diodes for various applications in the automotive, industrial, and consumer markets.

Inchange is known for its focus on quality and reliability, and its products are widely used in power management, lighting, and other applications.

The company has operations in several countries and is one of the leading suppliers of power devices and diodes in the Asia-Pacific region.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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