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IRG4IBC20KD Datasheet (PDF) - International Rectifier

IRG4IBC20KD Datasheet PDF - International Rectifier
Part # IRG4IBC20KD
Download  IRG4IBC20KD Download

File Size   199.67 Kbytes
Page   10 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4IBC20KD Datasheet (PDF)

Go To PDF Page Download Datasheet
IRG4IBC20KD Datasheet PDF - International Rectifier

Part # IRG4IBC20KD
Download  IRG4IBC20KD Click to download

File Size   199.67 Kbytes
Page   10 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4IBC20KD Datasheet (HTML) - International Rectifier

IRG4IBC20KD Datasheet HTML 1Page - International Rectifier IRG4IBC20KD Datasheet HTML 2Page - International Rectifier IRG4IBC20KD Datasheet HTML 3Page - International Rectifier IRG4IBC20KD Datasheet HTML 4Page - International Rectifier IRG4IBC20KD Datasheet HTML 5Page - International Rectifier IRG4IBC20KD Datasheet HTML 6Page - International Rectifier IRG4IBC20KD Datasheet HTML 7Page - International Rectifier IRG4IBC20KD Datasheet HTML 8Page - International Rectifier IRG4IBC20KD Datasheet HTML 9Page - International Rectifier IRG4IBC20KD Datasheet HTML 10Page - International Rectifier

IRG4IBC20KD Product details

Features
• High switching speed optimized for up to 25kHz
   with low VCE(on)
• Short Circuit Rating 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
   parameter distribution and higher efficiency than
   previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
   ultra-soft-recovery anti-parallel diodes for use in
   bridge configurations
• Industry standard TO-220 FULLPAK

Benefits
• Generation 4 IGBTs offer highest efficiencies available
   maximizing the power density of the system
• IGBTs optimized for specific application conditions
• HEXFREDTM diodes optimized for performance with IGBTs.
   Minimized recovery characteristics reduce noise EMI
• Designed to exceed the power handling capability of
   equivalent industry-standard IGBTs




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About International Rectifier


International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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