Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
1SS352
|
121Kb/2P
|
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
1SS352
|
203Kb/3P
|
Ultra High Speed Switching Application
|
Guangdong Kexin Industr... |
1SS352
|
33Kb/1P
|
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE
|
SEMTECH ELECTRONICS LTD... |
1SS352
|
257Kb/3P
|
SILICON EPITAXIAL PLANAR DIODE
|
Toshiba Semiconductor |
1SS352
|
214Kb/3P
|
Ultra High Speed Switching Application
|
SHIKUES Electronics |
1SS352
|
398Kb/3P
|
Silicon Epitaxial Planar Switching Diode
|
Toshiba Semiconductor |
1SS352TPH3
|
214Kb/3P
|
Ultra High Speed Switching Application
|
1SS352
|
203Kb/3P
|
Ultra High Speed Switching Application
|
Search Partnumber :
Start with "1SS352" -
Total : 100 ( 1/5 Page) |
Toshiba Semiconductor |
1SS352TPH3
|
214Kb/3P |
Ultra High Speed Switching Application
|
1SS352
|
203Kb/3P |
Ultra High Speed Switching Application
|
Sanyo Semicon Device |
1SS350
|
57Kb/2P |
UHF Detector, Mixer Applications
|
Guangdong Kexin Industr... |
1SS350
|
34Kb/1P |
Sillicon Epitaxial Schottky Barrier Diode
|
Sanyo Semicon Device |
1SS351
|
56Kb/2P |
UHF Detector, Mixer Applications
|
Guangdong Kexin Industr... |
1SS351
|
34Kb/1P |
Sillicon Epitaxial Schottky Barrier Diode
|
Sanyo Semicon Device |
1SS351
|
358Kb/6P |
UHF Detector, Mixer Applications
|
ON Semiconductor |
1SS351
|
257Kb/6P |
Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP
September, 2013 |
1SS351
|
257Kb/6P |
Schottky Barrier Diode
September, 2013 |
1SS351-TB-E
|
257Kb/6P |
Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP
September, 2013 |
1SS351-TB-E
|
257Kb/6P |
Schottky Barrier Diode
September, 2013 |