2N2222A Datasheet, PDF - Alldatasheet

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Shortcut	2N2222A(158) recommended result.
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Start with	2N2222A(86) 2N2222A-(1) 2N2222AB(5) 2N2222AC(8) 2N2222AD(9) 2N2222AH(1) 2N2222AQ(2) 2N2222AS(2) 2N2222AU(27) 2N2222AV(5) 2N2222AW(5) 2N2222AX(6)
End	2N2222A(11) -2N2222A(1) N2N2222A(1) S2N2222A(2) T2N2222A(1) V2N2222A(1) *X2N2222A(1)
Included	2N2222A(21) 2N2222AR(1)

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2N2222A Datasheet, PDF

Search Partnumber : Included a word "2N2222A" - Total : 21 ( 1/2 Page)

Manufacturer	Part #	Datasheet	Description
Central Semiconductor C...	CP191-2N2222A-CT	465Kb/9P	P-Channel JFET Die R1 17-January 2018
	CP191-2N2222A-CT	530Kb/9P	PNP - High Voltage Transistor Die R0 8-August 2019
	CP191-2N2222A-WN	465Kb/9P	P-Channel JFET Die R1 17-January 2018
	CP191-2N2222A-WN	530Kb/9P	PNP - High Voltage Transistor Die R0 8-August 2019
	CP191-2N2222A-WR	465Kb/9P	P-Channel JFET Die R1 17-January 2018
	CP191-2N2222A-WR	530Kb/9P	PNP - High Voltage Transistor Die R0 8-August 2019
	CP191-2N2222A-WS	465Kb/9P	P-Channel JFET Die R1 17-January 2018
	CP191-2N2222A-WS	530Kb/9P	PNP - High Voltage Transistor Die R0 8-August 2019
	CP191V-2N2222A-CT	465Kb/9P	P-Channel JFET Die R1 17-January 2018
	CP191V-2N2222A-CT	530Kb/9P	PNP - High Voltage Transistor Die R0 8-August 2019
	CP191V-2N2222A-WN	465Kb/9P	P-Channel JFET Die R1 17-January 2018
	CP191V-2N2222A-WN	530Kb/9P	PNP - High Voltage Transistor Die R0 8-August 2019
	CP191V-2N2222A-WR	530Kb/9P	PNP - High Voltage Transistor Die R0 8-August 2019
	CP191V-2N2222A-WR	465Kb/9P	P-Channel JFET Die R1 17-January 2018
Microsemi Corporation	JANS2N2222AUB	142Kb/6P	ELECTRICAL CHARACTERISTICS (TA = +25째C, unless otherwise noted)
	JANTX2N2222AUB	58Kb/2P	NPN SILICON SWITCHING TRANSISTOR 120101
	JANTX2N2222AUB	142Kb/6P	TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR
ON Semiconductor	P2N2222AG	165Kb/6P	Amplifier Transistors(NPN Silicon) April, 2007 -- Rev. 5
ON Semiconductor	P2N2222ARL1G	165Kb/6P	Amplifier Transistors(NPN Silicon) April, 2007 -- Rev. 5
Seme LAB	SF_2N2222AXCSM	10Kb/1P	Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications

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Brief Description of 2N2222A

The 2N2222A is a widely used NPN bipolar junction transistor (BJT) that is commonly used for amplification and switching in electronic circuits. It is part of the 2N22xx series of transistors, which are known for their general-purpose applications. Here are some key features and specifications of the 2N2222A transistor:

Polarity: NPN (Negative-Positive-Negative).

The 2N2222A is constructed with an N-type layer in the middle, sandwiched between P-type layers on the outside.
Maximum Collector Current (Ic): Typically around 800 mA.

This is the maximum current that can flow from the collector to the emitter when the transistor is in the on state.
Maximum Collector-Base Voltage (Vcbo): Typically around 75V.

This is the maximum voltage that can be applied between the collector and base terminals while keeping the emitter terminal open.
Maximum Collector-Emitter Voltage (Vceo): Typically around 30V.

This is the maximum voltage that can be applied between the collector and emitter terminals while the base is open.
Gain (hfe or Beta): Typically around 100 to 300.

The gain, denoted as hfe or Beta, represents the amplification capability of the transistor. It shows how much the collector current is amplified compared to the base current.
Package: The 2N2222A is commonly available in TO-18 or TO-92 packages, which are small and widely used in various electronic circuits.

Applications: The 2N2222A transistor is used in a wide range of electronic circuits, including amplifiers, switching applications, signal processing, oscillators, and more.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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