| Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
2SC3619
|
129Kb/5P
|
Silicon NPN Triple Diffused Type (PCT Process) High-Voltage Switching and Amplifier Applications
|
| Search Partnumber :
Start with "2SC3619_" -
Total : 14 ( 1/1 Page) |
Toshiba Semiconductor |
2SC3619
|
129Kb/5P |
Silicon NPN Triple Diffused Type (PCT Process) High-Voltage Switching and Amplifier Applications
|
Panasonic Semiconductor |
2SC3611
|
70Kb/4P |
Silicon NPN epitaxial planar type(For video amplifier)
2001 MAR |
Toshiba Semiconductor |
2SC3613
|
226Kb/3P |
NPN EPITAXIAL TYPE (VIDEO DRIVER STAGE IN HIGH RESOUTION DISPLAY, HIGH SPEED SWITCHING APPLICATIONS)
|
NEC |
2SC3615
|
164Kb/3P |
NPN SILICON TRANSISTOR
|
|
2SC3616
|
168Kb/3P |
NPN SILICON TRANSISTOR
|
Renesas Technology Corp |
2SC3617
|
346Kb/6P |
Old Company Name in Catalogs and Other Documents
|
Guangdong Kexin Industr... |
2SC3617
|
51Kb/1P |
NPN Silicon Epitaxia
|
NEC |
2SC3617
|
225Kb/4P |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
Renesas Technology Corp |
2SC3617
|
346Kb/6P |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC |
2SC3618
|
228Kb/4P |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
Guangdong Kexin Industr... |
2SC3618
|
51Kb/1P |
NPN Silicon Epitaxia
|
Renesas Technology Corp |
2SC3618
|
1Mb/6P |
SILICON TRANSISTOR
1985 |
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