Manufacturer | Part # | Datasheet | Description |
Bi technologies |
BS2-01
|
446Kb/9P
|
BS DIP
|
BS2-SE
|
356Kb/7P
|
BS DIP
|
List of Unclassifed Man... |
BS20
|
107Kb/2P
|
Conduit Accessories
|
Vestal Electronic Devic... |
BS20-720X300
|
20Kb/1P
|
Bare Staple Jumper Wire
|
BS20-875X175
|
20Kb/1P
|
Bare Staple Jumper Wire
|
List of Unclassifed Man... |
BS20-H
|
107Kb/2P
|
Conduit Accessories
|
BS20-L
|
107Kb/2P
|
Conduit Accessories
|
BS2011
|
70Kb/2P
|
GORE-SHIELD짰 GS2100 EMI Gasket is a conductive, adhesive backed, EMI gasketing material that is moderately soft and is approved for spacefl ight and military applications.
|
Xtaltq Technologies Co.... |
BS2016A
|
231Kb/2P
|
Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package
|
BS2016AD3I505CN20
|
231Kb/2P
|
Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package
|
Shenzhen Bencent Electr... |
BS201N
|
225Kb/3P
|
Gas Discharge Tube
|
NXP Semiconductors |
BS208
|
64Kb/12P
|
P-channel enhancement mode vertical D-MOS transistor
April 1995
|
Diodes Incorporated |
BS208
|
62Kb/2P
|
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
DS21901 Rev. E-3
|
General Semiconductor |
BS208
|
238Kb/5P
|
DMOS Transistors (P-Channel)
|
BS209
|
37Kb/2P
|
DMOS Transistors (P-Channel)
|
Rohm |
BS2100F
|
838Kb/19P
|
Built-in Under Voltage Lockout for Both Channels
|
BS2101F
|
876Kb/23P
|
High voltage
|
BS2101F-E2
|
876Kb/23P
|
High voltage
|
BS2103F
|
895Kb/24P
|
High voltage High & Low-side, Gate Driver
|
BS2103F-E2
|
895Kb/24P
|
High voltage High & Low-side, Gate Driver
|