Manufacturer | Part # | Datasheet | Description |
Infineon Technologies A... |
IDW100E60
|
165Kb/6P
|
Fast Switching EmCon Diode
Rev. 1.1 Mar 06
|
IDW100E60
|
188Kb/7P
|
Fast Switching EmCon Diode
Rev. 2.1 Nov 09
|
IDW100E60
|
188Kb/7P
|
Fast Switching EmCon Diode
Rev. 2.1 Nov 09
|
IDW100E60
|
303Kb/7P
|
Fast Switching Emitter Controlled Diode
Rev. 2.3 20.09.2013
|
IDW10G120C5B
|
815Kb/10P
|
Revolutionary semiconductor material - Silicon Carbide
Rev. 2.0 2014-06-10
|
IDW10G65C5
|
417Kb/2P
|
650V SiC thinQ!??Generation 5 diodes
09 / 2012
|
IDW10G65C5
|
1Mb/11P
|
5t h Generation thinQ!TM 650V SiC Schottky Diode
Rev. 2.2, 2013-01-15
|
IDW10G65C5
|
1Mb/11P
|
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2013-01-15
|
IDW10G65C5
|
1Mb/11P
|
5t h Generation thinQ!TM 650V SiC Schottky Diode
Rev. 2.2, 2013-01-15
|
IDW10S120
|
743Kb/10P
|
Power Management & Mul t imarket
Rev. 2.0,<2012-03-23>
|
IDW10S120FKSA1
|
743Kb/10P
|
Power Management & Mul t imarket
Rev. 2.0,<2012-03-23>
|
IDW12G65C5
|
417Kb/2P
|
650V SiC thinQ!??Generation 5 diodes
09 / 2012
|
IDW12G65C5
|
1Mb/11P
|
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2013-01-15
|
IDW15E65D2
|
1Mb/10P
|
Qualified according to JEDEC for target applications
Rev.2.2,2014-08-26
|
IDW15G120C5B
|
590Kb/10P
|
Revolutionary semiconductor material - Silicon Carbide
Rev. 2.0 2014-06-10
|
IDW15S120
|
744Kb/10P
|
thinQ!TM SiC Schot tky Diode
Rev. 2.0,2012-03-23
|
IDW16G65C5
|
417Kb/2P
|
650V SiC thinQ!??Generation 5 diodes
09 / 2012
|
IDW16G65C5
|
1Mb/11P
|
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2013-01-15
|
IDW20C65D2
|
1Mb/10P
|
Emitter Controlled Diode Rapid 2 Common Cathode Series
Rev.2.1,2014-12-09
|
IDW20G120C5B
|
593Kb/10P
|
Revolutionary semiconductor material - Silicon Carbide
Rev. 2.0 2014-06-10
|