Manufacturer | Part # | Datasheet | Description |
Samsung semiconductor |
IRF721
|
273Kb/5P
|
N-CHANNEL POWER MOSFETS
|
Fairchild Semiconductor |
IRF721
|
164Kb/5P
|
N-Channel Power MOSFETs, 3.0 A, 350-400 V
|
International Rectifier |
IRF721
|
554Kb/8P
|
TRANSISTORS N-CHANNEL
|
New Jersey Semi-Conduct... |
IRF721
|
1,011Kb/3P
|
400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package
|
Inchange Semiconductor ... |
IRF721
|
45Kb/2P
|
isc N-Channel MOSFET Transistor
|
ARTSCHIP ELECTRONICS CO... |
IRF721
|
333Kb/6P
|
N-Channel Power MOSFETs
|
STMicroelectronics |
IRF721
|
343Kb/6P
|
N-channel enhancement mode power mos transistors
June 1988
|
International Rectifier |
IRF7210
|
145Kb/7P
|
HEXFET Power MOSFET
|
IRF7210PBF
|
547Kb/7P
|
HEXFET Power MOSFET
|
IRF7210PBF
|
553Kb/7P
|
Ultra Low On-Resistance
|
VBsemi Electronics Co.,... |
IRF7210TRPBF
|
1Mb/6P
|
P-Channel 12-V (D-S) MOSFET
|
International Rectifier |
IRF7210TRPBF
|
553Kb/7P
|
Ultra Low On-Resistance
|
STMicroelectronics |
IRF721FI
|
343Kb/6P
|
N-channel enhancement mode power mos transistors
June 1988
|