Manufacturer |
Marking |
Part # |
Package |
Datasheet |
Description |
Guangdong Kexin Industr... |
007
|
2KJ007PDFN
|
DFN2X2-6L-A
|
525Kb / 5P |
Dual P-channel MOSFET
|
ON Semiconductor |
0072
|
NCS20072DMR2G
|
Micro8
|
1Mb / 30P |
Operational Amplifier, Railto-Rail Output, 3 MHz BW
September, 2018 - Rev. 14 |
0072
|
NCV20072DMR2G
|
Micro8
|
1Mb / 30P |
Operational Amplifier, Railto-Rail Output, 3 MHz BW
September, 2018 - Rev. 14 |
Renesas Technology Corp |
007CZ
|
ISL9007IUCZ
|
8LdMSOP
|
503Kb / 9P |
High Current LDO with Low IQ and High PSRR
|
007FZ
|
ISL9007IUFZ
|
8LdMSOP
|
503Kb / 9P |
High Current LDO with Low IQ and High PSRR
|
007JZ
|
ISL9007IUJZ
|
8LdMSOP
|
503Kb / 9P |
High Current LDO with Low IQ and High PSRR
|
007KZ
|
ISL9007IUKZ
|
8LdMSOP
|
503Kb / 9P |
High Current LDO with Low IQ and High PSRR
|
007NZ
|
ISL9007IUNZ
|
8LdMSOP
|
503Kb / 9P |
High Current LDO with Low IQ and High PSRR
|
ON Semiconductor |
007N04C
|
NVTYS007N04CTWG
|
LFPAK8
|
333Kb / 7P |
MOSFET ??Power, Single N-Channel 40 V, 8.6 m, 49 A
May, 2021 ??Rev. 0 |
Infineon Technologies A... |
007N06N
|
IPT007N06N
|
PG-HSOF-8-1
|
1Mb / 12P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.1,2014-02-20 |
007N06N
|
IPTG007N06NM5
|
PG-HSOG-8-1
|
1Mb / 11P |
OptiMOS™ 5 Power-Transistor, 60 V
Rev. 2.1, 2021-04-22 |
ON Semiconductor |
007N04CL
|
NVTYS007N04CLTWG
|
LFPAK33
|
330Kb / 7P |
MOSFET ??Power, Single N-Channel 40 V, 7.3 m, 54 A
April, 2021 ??Rev. 0 |
Infineon Technologies A... |
007N04SC
|
BSC007N04LS6SC
|
PG-WSON-8
|
1Mb / 11P |
OptiMOSTM 6 Power-Transistor, 40 V
Rev. 2.1, 2022-10-06 |
ON Semiconductor |
007N10MCL
|
NVMYS007N10MCLTWG
|
LFPAK4
|
330Kb / 6P |
MOSFET - Power, Single N-Channel 100 V, 7 m, 83 A
May, 2022 - Rev. 0 |