The document provides detailed specifications for high-power NPN silicon transistors designed for use in industrial-military power amplifier and switching circuit applications.
It includes information on the high collector-emitter sustaining voltage, high DC current gain, low collector-emitter saturation voltage, and fast switching times.
It also lists the maximum ratings for the transistors, as well as their electrical characteristics and thermal resistance.
The document also includes figures and test circuits for switching time and turn-on time.