1. Overview & Key Features

️· Type: NPN Bipolar Junction Transistor (BJT)
️· Application: General Purpose - Suitable for various switching and amplification applications.
️· Key Features:
- Low saturation voltage (Vce(sat)) - around 1.3 V
- Relatively high current gain (hFE) - around 200+ at specified collector current
- Low collector cut-off current (Ic) – contributing to power efficiency

2. Absolute Maximum Ratings (Important - Don't Exceed These)

️· Collector-Emitter Voltage (Vce): 50 V
️· Collector-Base Voltage (Vcb): 60 V
️· Emitter-Base Voltage (Veb): 5 V
️· Collector Current (Ic): 1.5 A (continuous)
️· Power Dissipation (Pc): 3 W
️· Junction Temperature (Tj): 150 °C
️· Storage Temperature Range: -55 °C to +150 °C

3. Electrical Characteristics (Typical Values - Performance)

️· Vce(sat) (Collector-Emitter Saturation Voltage): 1.3 V (typically) at Ic = 1 A and Ib = 0.5 A
️· DC Current Gain (hFE): ≥ 200 at Ic = 0.1A, Vce = 5V
️· Collector Cutoff Current (Ic): ≤ 100 nA at Vce = 30V.
️· Forward Voltage (Vbe): 0.7V

4. Thermal Characteristics

️· Thermal Resistance (Junction to Ambient): 50 °C/W (This indicates how well heat is dissipated to the surrounding environment. Lower is better.)

5. Package Information

️· Available in TO-92 package. (Standard through-hole package).

6. Ordering Information

️· The datasheet lists specific ordering codes (e.g., 2PD602AXL, etc.), which will define the exact packaging and marking.

7. Important Notes

️· Power Dissipation: The maximum power dissipation is 3W, which is important for thermal management.
️· Operating Conditions: The transistor's performance will be affected by temperature. Refer to the datasheet curves for detailed information.