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Part No.	BS170
Manufacturer	MOTOROLA
Size	77 Kbytes
Pages	4 pages
Description	TMOS FET Switching(N-Channel-Enhancement)

Datasheet Summary with AI

Document Type: Motorola Small-Signal Transistor Data Sheet (BS170/D)

Device: N-Channel Enhancement Mode Power MOSFET

1. Overview & Purpose

This document provides detailed specifications, electrical characteristics, switching characteristics, package dimensions, and application information for the Motorola BS170/D N-Channel Enhancement Mode Power MOSFET. It’s intended for engineers designing circuits that use this transistor.

2. Key Features & Characteristics

️· Enhancement Mode: The transistor is normally off and requires a gate voltage to turn on.
️· N-Channel: The transistor conducts when a positive voltage is applied to the gate relative to the source.
️· Power MOSFET: Designed to handle significant power and voltage levels.
️· Logic-Level Operation: Can be driven by standard logic circuits.
️· Fast Switching: Designed for switching applications.

3. Electrical Characteristics (Key Values)

️· VDS (Drain-Source Voltage): Up to 25V
️· VGS(th) (Gate-Source Threshold Voltage): 0.8V to 3.0V (Typically 2.0V) - Important for knowing the voltage needed to turn on the transistor.
️· rDS(on) (Drain-Source On Resistance): 1.8 Ω (Typically) – A lower value is desirable as it reduces power loss.
️· ID(off) (Drain Cutoff Current): 0.5µA – Indicates leakage current when the transistor is “off.”
️· gfs (Forward Transconductance): 200 mmhos – Relates drain current to gate-source voltage.

4. Switching Characteristics

️· ton (Turn-On Time): Up to 10 ns
️· toff (Turn-Off Time): Up to 10 ns

5. Package Information

️· Package Type: Not explicitly stated, but the package dimensions section provides information for a standard type.
️· Dimensions: The document includes detailed dimensional specifications in both inches and millimeters.

6. Figures and Diagrams (Important for understanding behavior)

️· Figure 6: Capacitance vs. Drain-Source Voltage: Shows how the capacitance of the transistor changes with the voltage between the drain and source. Important for high frequency designs.
️· Figure 1: Switching Test Circuit: Illustrates the recommended setup for measuring switching characteristics.
️· Figure 2: Switching Waveforms: Visual representation of input and output signals during switching.
️· Figure 3: VGS(th) Normalized vs. Temperature: Shows how the gate threshold voltage changes with temperature.
️· Figure 4: On-Region Characteristics: A graphical representation of the relationship between voltage and current, with focus on the active region.
️· Figure 5: Output Characteristics: Graph of drain current versus drain-source voltage for various gate voltages.

7. Important Notes & Cautions

️· Power Dissipation: The document cautions that power dissipation can limit the maximum drain current. Proper heat sinking may be required.
️· Switching times: These values are maximums and will vary based on the driving circuit.