The BSC077N12NS3 G OptiMOSTM3 Power-Transistor is an N-channel, normal level power transistor with excellent gate charge x RDS(on) product (FOM) and very low on-resistance RDS(on).
It has a maximum continuous drain current of 98A at 25°C and 61A at 100°C, and a maximum power dissipation of 139W at 25°C.
It is ideal for high-frequency switching and synchronous rectification, and is halogen-free and RoHS compliant.
The transistor is qualified according to JEDEC for target application and has a maximum operating temperature of 150°C.
It also has a Pb-free lead plating.
The package is PG-TDSON-8 and it is suitable for high-power applications.