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Example questions:
1. What is the maximum continuous drain current for the BSC252N10NSF G OptiMOS 2 Power-Transistor at a case temperature of 25 °C?
2. What is the maximum power dissipation for the BSC252N10NSF G OptiMOS 2 Power-Transistor at a case temperature of 25 °C?
3. What is the gate-source voltage range for the BSC252N10NSF G OptiMOS 2 Power-Transistor?
The BSC252N10NSF G OptiMOS ™2 Power-Transistor is a high-performance N-channel power transistor optimized for dc-dc conversion and high frequency applications.
It features very low gate charge, low on-resistance, and a 150 °C operating temperature.
The transistor is Pb-free and RoHS compliant, and is qualified according to JEDEC for target applications.
It also meets halogen-free standards.
The maximum ratings for the transistor include a continuous drain current of 40A, a pulsed drain current of 160A, and a drain-source breakdown voltage of 100V.
The thermal and electrical characteristics of the transistor are also detailed in the summary.
Additionally, the package outline and dimensions are provided, along with legal disclaimers and warnings regarding the use of the component in life-support devices.
Part No. | BSC252N10NSFG |
Manufacturer | INFINEON |
Size | 419 Kbytes |
Pages | 10 pages |
Description | OptiMOS?? Power-Transistor |
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