SW100N10B / Xian Semipower Electronic Technology Co., Ltd.

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Part No.	SW100N10B
Manufacturer	SEMIPOWER
Size	547 Kbytes
Pages	5 pages
Description	N-channel TO-220 MOSFET

Datasheet Summary with AI

1. Core Specifications:

️· Voltage (Vds): 100V
️· Current (Id): 100A (continuous, at 25°C), 63A (at 100°C), 400A (pulsed)
️· Rds(on): 10.5 mΩ (at Vgs = 10V, Id = 50A)
️· Power Dissipation (Pd): 318W (at 25°C)

2. Key Features:

️· N-Channel MOSFET designed for high-power switching applications.
️· Low gate charge for efficient switching.
️· Avalanche energy rated (EAS = 1121mJ) for robust performance.
️· Suitable for applications like power supplies, motor drives, and DC-DC converters.

3. Absolute Maximum Ratings:

️· Drain-Source Voltage (Vds): 100V
️· Continuous Drain Current: 100A (Tc=25°C), 63A (Tc=100°C)
️· Pulsed Drain Current: 400A
️· Gate-Source Voltage: ±20V
️· Power Dissipation: 318W (at 25°C)
️· Operating/Storage Temperature: -55°C to +150°C

4. Thermal Characteristics:

️· Junction-to-Case Thermal Resistance (Rthjc): 0.39 °C/W
️· Case-to-Sink Thermal Resistance (Rthcs): 0.5 °C/W
️· Junction-to-Ambient Thermal Resistance (Rthja): 51.6 °C/W

5. Electrical Characteristics (at 25°C unless otherwise specified):

️· Off Characteristics: Leakage currents and breakdown voltages.
️· On Characteristics: Threshold voltage, Rds(on), and forward transconductance.
️· Dynamic Characteristics: Input/output capacitance, turn-on/off delays and times, and total gate charge.
️· Source-Drain Diode Characteristics: Forward voltage and reverse recovery time/charge.

6. Figures & Diagrams:

️· On-State Characteristics
️· On-Resistance vs. Drain Current/Gate Voltage
️· Gate Charge Characteristics
️· Maximum Safe Operating Area
️· Transient Thermal Response
️· Gate Charge Test Circuit & Waveform
️· Switching Time Test Circuit & Waveform
️· Unclamped Inductive Switching Test Circuit & Waveform
️· Peak Diode Recovery dv/dt Test Circuit & Waveform

7. Package: TO-220

8. Notes:

️· Drain current is limited by junction temperature.
️· Avalanche energy and repetitive avalanche energy are dependent on the application.
️· Pulse tests are subject to specific duty cycle limitations.

This datasheet provides comprehensive information for engineers designing with the SW100N10B MOSFET. The key specifications, thermal characteristics, and electrical parameters are clearly outlined, along with supporting diagrams and test circuits.