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Hello, Please ask a question about ACE3010M Datasheet
# Example questions:
➢ What is the typical drain-source on-resistance (rds(on)) when vgs = 10v and id = 9.2a?
➢ What is the pulsed drain current (idm) and what limits its duration?
➢ What are the maximum junction-to-case (rθjc) and junction-to-ambient (rθja) thermal resistance values?
1. General Description
️· Type: N-Channel MOSFET
️· Voltage Rating (Drain-Source): 100V
️· Manufacturer: ACE Technology Co., Ltd.
️· Website: [http://www.ace-ele.com/](http://www.ace-ele.com/)
️· Package: TO-252
️· Disclaimer: ACE does not assume responsibility for use in life-support systems without written approval.
2. Key Electrical Characteristics (at 25°C unless otherwise noted)
️· Drain-Source Voltage (VDS): 100V (Max)
️· Gate-Source Voltage (VGS): ±20V (Max)
️· Drain Current (Continuous, ID): 26A
️· Drain Current (Pulsed, IDM): 100A
️· Source Current (Diode, IS): 30A
️· Power Dissipation (PD): 100W
️· Operating/Storage Temperature Range (TJ, Tstg): -55°C to 175°C
️· Gate-Source Threshold Voltage (VGS(th)): 1V (Min)
️· Zero Gate Voltage Drain Current (IDSS): 1A (Max, VDS=80V), 25A (Max, VDS=80V, TJ=55°C)
️· On-State Drain Current (ID(on)): 34A (VDS=5V, VGS=10V)
️· Drain-Source On-Resistance (RDS(on)): 78 mΩ (VGS=10V, ID=9.2A), 92 mΩ (VGS=4.5V, ID=6.1A)
️· Transconductance (gfs): 20 S (VDS=40V, ID=5.5A)
️· Diode Forward Voltage (VSD): 0.8V (IS=9A, VGS=0V)
️· Total Gate Charge (Qg): 21 nC
️· Gate-Source Charge (Qgs): 3.8 nC
️· Gate-Drain Charge (Qgd): 14.2 nC
3. Thermal Resistance
️· Junction-to-Ambience (RθJA): 40 °C/W (Surface mounted on 1" x 1" FR4 board with 2oz copper)
️· Junction-to-Case (RθJC): 1.5 °C/W
4. Ordering Information
️· Ordering Code: ACE3010M XX + H (XX represents specific variants - not fully defined in this datasheet)
️· Package: TO-252
️· Lead Finish: Halogen-free, Pb-free.
5. Mechanical Dimensions (TO-252 Package)
The datasheet includes a table detailing all relevant dimensions of the TO-252 package (e.g., E, L, D, H, b, e, A, A1, c, c2). (See the original datasheet for details)
6. Typical Performance Characteristics
The datasheet contains various graphs depicting characteristic behavior, including:
️· ID vs. VDS (Drain Current vs. Drain-Source Voltage)
️· ID vs. VGS (Drain Current vs. Gate-Source Voltage)
️· RDS(on) vs. VGS (Drain-Source On-Resistance vs. Gate-Source Voltage)
️· Output Characteristics
️· Capacitance Characteristics
1. General Description
️· Type: N-Channel MOSFET
️· Voltage Rating (Drain-Source): 100V
️· Manufacturer: ACE Technology Co., Ltd.
️· Website: [http://www.ace-ele.com/](http://www.ace-ele.com/)
️· Package: TO-252
️· Disclaimer: ACE does not assume responsibility for use in life-support systems without written approval.
2. Key Electrical Characteristics (at 25°C unless otherwise noted)
️· Drain-Source Voltage (VDS): 100V (Max)
️· Gate-Source Voltage (VGS): ±20V (Max)
️· Drain Current (Continuous, ID): 26A
️· Drain Current (Pulsed, IDM): 100A
️· Source Current (Diode, IS): 30A
️· Power Dissipation (PD): 100W
️· Operating/Storage Temperature Range (TJ, Tstg): -55°C to 175°C
️· Gate-Source Threshold Voltage (VGS(th)): 1V (Min)
️· Zero Gate Voltage Drain Current (IDSS): 1A (Max, VDS=80V), 25A (Max, VDS=80V, TJ=55°C)
️· On-State Drain Current (ID(on)): 34A (VDS=5V, VGS=10V)
️· Drain-Source On-Resistance (RDS(on)): 78 mΩ (VGS=10V, ID=9.2A), 92 mΩ (VGS=4.5V, ID=6.1A)
️· Transconductance (gfs): 20 S (VDS=40V, ID=5.5A)
️· Diode Forward Voltage (VSD): 0.8V (IS=9A, VGS=0V)
️· Total Gate Charge (Qg): 21 nC
️· Gate-Source Charge (Qgs): 3.8 nC
️· Gate-Drain Charge (Qgd): 14.2 nC
3. Thermal Resistance
️· Junction-to-Ambience (RθJA): 40 °C/W (Surface mounted on 1" x 1" FR4 board with 2oz copper)
️· Junction-to-Case (RθJC): 1.5 °C/W
4. Ordering Information
️· Ordering Code: ACE3010M XX + H (XX represents specific variants - not fully defined in this datasheet)
️· Package: TO-252
️· Lead Finish: Halogen-free, Pb-free.
5. Mechanical Dimensions (TO-252 Package)
The datasheet includes a table detailing all relevant dimensions of the TO-252 package (e.g., E, L, D, H, b, e, A, A1, c, c2). (See the original datasheet for details)
6. Typical Performance Characteristics
The datasheet contains various graphs depicting characteristic behavior, including:
️· ID vs. VDS (Drain Current vs. Drain-Source Voltage)
️· ID vs. VGS (Drain Current vs. Gate-Source Voltage)
️· RDS(on) vs. VGS (Drain-Source On-Resistance vs. Gate-Source Voltage)
️· Output Characteristics
️· Capacitance Characteristics
| Part No. | ACE3010M |
| Manufacturer | ACE |
| Size | 529 Kbytes |
| Pages | 7 pages |
| Description | N-Channel 100-V MOSFET |
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