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ACE3010M Datasheet with Chat AI
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  • Part No.ACE3010M
    ManufacturerACE
    Size529 Kbytes
    Pages7 pages
    DescriptionN-Channel 100-V MOSFET
    Datasheet Summary with AI

    1. General Description

    ️· Type: N-Channel MOSFET
    ️· Voltage Rating (Drain-Source): 100V
    ️· Manufacturer: ACE Technology Co., Ltd.
    ️· Website: [http://www.ace-ele.com/](http://www.ace-ele.com/)
    ️· Package: TO-252
    ️· Disclaimer: ACE does not assume responsibility for use in life-support systems without written approval.

    2. Key Electrical Characteristics (at 25°C unless otherwise noted)

    ️· Drain-Source Voltage (VDS): 100V (Max)
    ️· Gate-Source Voltage (VGS): ±20V (Max)
    ️· Drain Current (Continuous, ID): 26A
    ️· Drain Current (Pulsed, IDM): 100A
    ️· Source Current (Diode, IS): 30A
    ️· Power Dissipation (PD): 100W
    ️· Operating/Storage Temperature Range (TJ, Tstg): -55°C to 175°C
    ️· Gate-Source Threshold Voltage (VGS(th)): 1V (Min)
    ️· Zero Gate Voltage Drain Current (IDSS): 1A (Max, VDS=80V), 25A (Max, VDS=80V, TJ=55°C)
    ️· On-State Drain Current (ID(on)): 34A (VDS=5V, VGS=10V)
    ️· Drain-Source On-Resistance (RDS(on)): 78 mΩ (VGS=10V, ID=9.2A), 92 mΩ (VGS=4.5V, ID=6.1A)
    ️· Transconductance (gfs): 20 S (VDS=40V, ID=5.5A)
    ️· Diode Forward Voltage (VSD): 0.8V (IS=9A, VGS=0V)
    ️· Total Gate Charge (Qg): 21 nC
    ️· Gate-Source Charge (Qgs): 3.8 nC
    ️· Gate-Drain Charge (Qgd): 14.2 nC

    3. Thermal Resistance

    ️· Junction-to-Ambience (RθJA): 40 °C/W (Surface mounted on 1" x 1" FR4 board with 2oz copper)
    ️· Junction-to-Case (RθJC): 1.5 °C/W

    4. Ordering Information

    ️· Ordering Code: ACE3010M XX + H (XX represents specific variants - not fully defined in this datasheet)
    ️· Package: TO-252
    ️· Lead Finish: Halogen-free, Pb-free.

    5. Mechanical Dimensions (TO-252 Package)

    The datasheet includes a table detailing all relevant dimensions of the TO-252 package (e.g., E, L, D, H, b, e, A, A1, c, c2). (See the original datasheet for details)

    6. Typical Performance Characteristics

    The datasheet contains various graphs depicting characteristic behavior, including:

    ️· ID vs. VDS (Drain Current vs. Drain-Source Voltage)
    ️· ID vs. VGS (Drain Current vs. Gate-Source Voltage)
    ️· RDS(on) vs. VGS (Drain-Source On-Resistance vs. Gate-Source Voltage)
    ️· Output Characteristics
    ️· Capacitance Characteristics

    1. General Description

    ️· Type: N-Channel MOSFET
    ️· Voltage Rating (Drain-Source): 100V
    ️· Manufacturer: ACE Technology Co., Ltd.
    ️· Website: [http://www.ace-ele.com/](http://www.ace-ele.com/)
    ️· Package: TO-252
    ️· Disclaimer: ACE does not assume responsibility for use in life-support systems without written approval.

    2. Key Electrical Characteristics (at 25°C unless otherwise noted)

    ️· Drain-Source Voltage (VDS): 100V (Max)
    ️· Gate-Source Voltage (VGS): ±20V (Max)
    ️· Drain Current (Continuous, ID): 26A
    ️· Drain Current (Pulsed, IDM): 100A
    ️· Source Current (Diode, IS): 30A
    ️· Power Dissipation (PD): 100W
    ️· Operating/Storage Temperature Range (TJ, Tstg): -55°C to 175°C
    ️· Gate-Source Threshold Voltage (VGS(th)): 1V (Min)
    ️· Zero Gate Voltage Drain Current (IDSS): 1A (Max, VDS=80V), 25A (Max, VDS=80V, TJ=55°C)
    ️· On-State Drain Current (ID(on)): 34A (VDS=5V, VGS=10V)
    ️· Drain-Source On-Resistance (RDS(on)): 78 mΩ (VGS=10V, ID=9.2A), 92 mΩ (VGS=4.5V, ID=6.1A)
    ️· Transconductance (gfs): 20 S (VDS=40V, ID=5.5A)
    ️· Diode Forward Voltage (VSD): 0.8V (IS=9A, VGS=0V)
    ️· Total Gate Charge (Qg): 21 nC
    ️· Gate-Source Charge (Qgs): 3.8 nC
    ️· Gate-Drain Charge (Qgd): 14.2 nC

    3. Thermal Resistance

    ️· Junction-to-Ambience (RθJA): 40 °C/W (Surface mounted on 1" x 1" FR4 board with 2oz copper)
    ️· Junction-to-Case (RθJC): 1.5 °C/W

    4. Ordering Information

    ️· Ordering Code: ACE3010M XX + H (XX represents specific variants - not fully defined in this datasheet)
    ️· Package: TO-252
    ️· Lead Finish: Halogen-free, Pb-free.

    5. Mechanical Dimensions (TO-252 Package)

    The datasheet includes a table detailing all relevant dimensions of the TO-252 package (e.g., E, L, D, H, b, e, A, A1, c, c2). (See the original datasheet for details)

    6. Typical Performance Characteristics

    The datasheet contains various graphs depicting characteristic behavior, including:

    ️· ID vs. VDS (Drain Current vs. Drain-Source Voltage)
    ️· ID vs. VGS (Drain Current vs. Gate-Source Voltage)
    ️· RDS(on) vs. VGS (Drain-Source On-Resistance vs. Gate-Source Voltage)
    ️· Output Characteristics
    ️· Capacitance Characteristics

    Part No.ACE3010M
    ManufacturerACE
    Size529 Kbytes
    Pages7 pages
    DescriptionN-Channel 100-V MOSFET
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