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1. What is the maximum continuous drain current for the BSC032N03S OptiMOS®2 Power-Transistor at a case temperature of 25 °C?
2. What is the maximum power dissipation for the BSC032N03S OptiMOS®2 Power-Transistor at a case temperature of 25 °C?
3. What is the maximum avalanche energy for a single pulse for the BSC032N03S OptiMOS®2 Power-Transistor with a drain current of 50 A and a gate-source resistance of 25 Ω?
The BSC032N03S is an OptiMOS®2 Power-Transistor designed for fast switching in SMPS and optimized for notebook DC/DC converters.
It is N-channel, logic level, and has very low on-resistance.
It is qualified according to JEDEC for target applications and has excellent gate charge x RDS(on) product.
The transistor is avalanche and dv/dt rated, with a maximum continuous drain current of 50A and a maximum drain-source breakdown voltage of 30V.
It has a P-TDSON-8 package and is suitable for a variety of power applications.
The datasheet also includes detailed electrical and thermal characteristics, as well as package outline and tape dimensions.
Part No. | BSC032N03S |
Manufacturer | INFINEON |
Size | 301 Kbytes |
Pages | 10 pages |
Description | OptiMOS2 Power-Transistor |
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