# isc N-Channel MOSFET Transistor 12N45

## Features

· Drain Current: 12A @ TC=25°C
· Drain Source Voltage: V DSS = 450V (Min)
· Static Drain-Source On-Resistance: R DS(on) = 0.5Ω (Max)
· Fast Switching

## Applications

· Switch mode power supply
· DC-DC converters
· AC motor control

## Absolute Maximum Ratings (Ta=25°C)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	450	V
VGS	Gate-Source Voltage-Continuous	±30	V
ID	Drain Current-Continuous	12	A
IDM	Drain Current-Single Plused	48	A
PD	Total Dissipation @TC=25℃	150	W
Tj	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

## Electrical Characteristics (TC=25°C unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYPE	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0; ID=250µA	450			V
VGS(th)	Gate Threshold Voltage	VDS= VGS; ID=250µA	2.0		4.0	V
VSD	Diode Forward On-voltage	IS= 12A ;VGS= 0			1.5	V
RDS(on)	Drain-Source On-Resistance	VGS= 10V; ID= 6A			0.5	Ω
IGSS	Gate-Body Leakage Current	VGS= ±20V;VDS= 0			±100	nA
IDSS	Zero Gate Voltage Drain Current	VDS=360V; VGS= 0			200	µA
Ciss	Input Capacitance	VDS=25V; VGS=0V; fT=1MHz		2700		pF
Crss	Reverse Transfer capacitance		80
Coss	Output Capacitance		290
tr	Rise Time	VGS=10V; ID=6.0A; VDD=225V; RGS=5Ω		25	50	ns
td(on)	Turn-on Delay Time		20	35	ns
tf	Fall Time		30	60	ns
td(off)	Turn-off Delay Time		70	100	ns

## Website

· www.iscsemi.cn