2N3174 / Inchange Semiconductor Company Limited

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Part No.	2N3174
Manufacturer	ISC
Size	261 Kbytes
Pages	2 pages
Description	isc Silicon PNP Power Transistor

Datasheet Summary with AI

## Electrical Characteristics (TC=25℃ unless otherwise specified)

️· VCE(sat): -0.75 V (Collector-Emitter Saturation Voltage @ IC=-1A; IB=-0.14A)
️· VBE(sat): -1.8 V (Base-Emitter Saturation Voltage @ IC=-1A; IB=-0.14A)
️· ICEO: -0.1 mA (Collector Cutoff Current @ VCE=-100V; IB=0)
️· IEBO: -0.1 mA (Emitter Cutoff Current @ VEB=-10V; IC=0)
️· hFE: 12-36 (DC Current Gain @ IC=-1A ; VCE=-3V)

## Website

️· isc website: www.iscsemi.com
️· isc & iscsemi is a registered trademark

# 2N3174 Silicon PNP Power Transistor

## Description

️· Excellent Safe Operating Area
️· Collector-Emitter Saturation Voltage: VCE(sat) = -0.75V (Max) @ IC = -1A
️· 100% avalanche tested
️· Minimum lot-to-lot variations for robust device performance.
️· Suitable for hermetically sealed semiconductor products processed according to BS, CECC, JAN, JANTX, JANTXV, and JAN specifications.

## Absolute Maximum Ratings (Ta=25℃)

️· VCBO: -100 V (Collector-Base Voltage)
️· VCEO: -100 V (Collector-Emitter Voltage)
️· VEBO: -10 V (Emitter-Base Voltage)
️· IC: -3 A (Collector Current - Continuous)
️· PC: 75 W (Collector Power Dissipation @ TC=25℃)
️· TJ, Tstg: -65~+150 ℃ (Operating and Storage Junction Temperature Range)
️· Rthj-c: 1.67 ℃/W (Thermal Resistance, Junction to Case)

## Electrical Characteristics (TC=25℃ unless otherwise specified)

️· VCE(sat): -0.75 V (Collector-Emitter Saturation Voltage @ IC=-1A; IB=-0.14A)
️· VBE(sat): -1.8 V (Base-Emitter Saturation Voltage @ IC=-1A; IB=-0.14A)
️· ICEO: -0.1 mA (Collector Cutoff Current @ VCE=-100V; IB=0)
️· IEBO: -0.1 mA (Emitter Cutoff Current @ VEB=-10V; IC=0)
️· hFE: 12-36 (DC Current Gain @ IC=-1A ; VCE=-3V)

## Website

️· isc website: www.iscsemi.com
️· isc & iscsemi is a registered trademark