# RG4A to RG4J Fast Sinterglass Diode
## Features
· High temperature metallurgically bonded construction
· Cavity-free glass passivated junction
· Fast switching for high efficiency
· 3.0 ampere operation at Tamb = 50 °C (no thermal runaway)
· Hermetically sealed package

## Mechanical Data
· Case: Sintered glass case, G4
· Terminals: Solder plated axial leads (solderable per MIL-STD-750, Method 2026)
· Mounting Position: Any
· Weight: 1040 mg

## Parts Table
· RG4A: VRRM = 50 V
· RG4B: VRRM = 100 V
· RG4D: VRRM = 200 V
· RG4G: VRRM = 400 V
· RG4J: VRRM = 600 V

## Absolute Maximum Ratings (Tamb = 25 °C)
· Maximum average forward rectified current: 3.0 A @ 55 °C, 0.375" lead length
· Peak forward surge current: 100 A (8.3 ms single half sine-wave)
· Maximum average reverse current: 2.0 µA @ 25 °C, 100 µA @ 100 °C
· Operating/Storage Temperature: -55 to +175 °C

## Thermal Resistance (Tamb = 25 °C)
· RθJA: 22 K/W (0.375" lead length, both leads attached to heat sink)

## Electrical Characteristics (Tamb = 25 °C)
· Maximum instantaneous forward voltage: 1.3 V (IF = 3.0 A)
· Maximum reverse current: 5.0 µA (VR = VRRM)
· Maximum reverse recovery time: 150 ns (RG4A, RG4B, RG4D, RG4G), 250 ns (RG4J) - (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A)
· Typical junction capacitance: 50 pF (VR = 4.0 V, f = 1 MHz)

## Environmental Policy
· Manufactured without ozone depleting substances.
· Compliant with Montreal Protocol, London Amendments, Clean Air Act, and Council Decisions 88/540/EEC and 91/690/EEC.