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Hello, Please ask a question about ACE25AC512G Datasheet
# Example questions:
➢ What command is used to read both the manufacturer id and device id, and what initial address is required to initiate this command?
➢ Describe the initial delivery state of the memory array and the status register of this spi nor flash device.
➢ What is the maximum operating current during a page program operation (pp)?
1. Device Overview & Features
️· Type: SPI NOR Flash Memory
️· Basic Operation: Uses a serial peripheral interface for command and data transfer.
️· Command Structure: Commands are issued by shifting in specific command codes.
️· Memory Array: Delivered in an erased state (all bits set to 1, or FFH).
️· Status Register: Initially all bits are 0.
2. Key Commands & Functions (with brief descriptions)
️· Read Manufacture/Device ID (REMS - 90H): Reads Manufacturer ID and Device ID.
️· Read Identification (RDID - 9FH): Reads Manufacturer ID and device identification (memory type, capacity).
️· Chip Erase (CE - 60/C7H): Erases the entire flash memory.
️· Block Erase (BE): Erases a block of memory.
️· Sector Erase (SE): Erases a sector of memory.
️· Page Program (PP): Writes data to a page of memory.
️· Write Status Register (WRSR): Modifies the Status Register.
️· Read Data (READ): Reads data from a specific address.
3. Electrical Characteristics
️· Power-Up Timing:
- `tVSL` (VCC min to CS# low): 10 µs
- `tPUW` (Time Delay Before Write Instruction): 1-10 ms
️· DC Characteristics (Typical conditions: -40°C to 85°C, VCC 2.7-3.6V):
- Input Leakage Current (ILI): ±2 µA
- Output Leakage Current (ILO): ±2 µA
- Standby Current (ICC1): 1-5 µA
- Operating Current (Read, ICC3): Varies depending on clock speed (e.g., 13-18 mA @ 40 MHz)
- Operating Current (Program/Erase, ICC4-ICC7): ~10mA for various erase/write operations.
- Input Voltages: Defined VIH (High) and VIL (Low) ranges.
- Output Voltages: Defined VOH (High) and VOL (Low) levels.
️· Capacitance Measurement
- CIN: Input Capacitance (6pF)
- COUT: Output Capacitance (8pF)
4. Data Retention and Endurance
️· Data Retention:
- Minimum Pattern Data Retention Time: 10 years @ 150°C, 20 years @ 125°C
️· Endurance:
- Erase/Program Endurance: 100,000 cycles (-40°C to 85°C)
5. Important Notes & Restrictions
️· Write Inhibit: A minimum voltage (VWI) is required on VCC before write operations can be performed.
️· Protected Blocks/Sectors: Chip Erase, Block Erase, and Sector Erase commands are ignored if corresponding blocks/sectors are protected.
6. Additional Diagrams
️· Input test waveform diagrams.
️· Maximum Negative/Positive Overshoot Waveform.
1. Device Overview & Features
️· Type: SPI NOR Flash Memory
️· Basic Operation: Uses a serial peripheral interface for command and data transfer.
️· Command Structure: Commands are issued by shifting in specific command codes.
️· Memory Array: Delivered in an erased state (all bits set to 1, or FFH).
️· Status Register: Initially all bits are 0.
2. Key Commands & Functions (with brief descriptions)
️· Read Manufacture/Device ID (REMS - 90H): Reads Manufacturer ID and Device ID.
️· Read Identification (RDID - 9FH): Reads Manufacturer ID and device identification (memory type, capacity).
️· Chip Erase (CE - 60/C7H): Erases the entire flash memory.
️· Block Erase (BE): Erases a block of memory.
️· Sector Erase (SE): Erases a sector of memory.
️· Page Program (PP): Writes data to a page of memory.
️· Write Status Register (WRSR): Modifies the Status Register.
️· Read Data (READ): Reads data from a specific address.
3. Electrical Characteristics
️· Power-Up Timing:
- `tVSL` (VCC min to CS# low): 10 µs
- `tPUW` (Time Delay Before Write Instruction): 1-10 ms
️· DC Characteristics (Typical conditions: -40°C to 85°C, VCC 2.7-3.6V):
- Input Leakage Current (ILI): ±2 µA
- Output Leakage Current (ILO): ±2 µA
- Standby Current (ICC1): 1-5 µA
- Operating Current (Read, ICC3): Varies depending on clock speed (e.g., 13-18 mA @ 40 MHz)
- Operating Current (Program/Erase, ICC4-ICC7): ~10mA for various erase/write operations.
- Input Voltages: Defined VIH (High) and VIL (Low) ranges.
- Output Voltages: Defined VOH (High) and VOL (Low) levels.
️· Capacitance Measurement
- CIN: Input Capacitance (6pF)
- COUT: Output Capacitance (8pF)
4. Data Retention and Endurance
️· Data Retention:
- Minimum Pattern Data Retention Time: 10 years @ 150°C, 20 years @ 125°C
️· Endurance:
- Erase/Program Endurance: 100,000 cycles (-40°C to 85°C)
5. Important Notes & Restrictions
️· Write Inhibit: A minimum voltage (VWI) is required on VCC before write operations can be performed.
️· Protected Blocks/Sectors: Chip Erase, Block Erase, and Sector Erase commands are ignored if corresponding blocks/sectors are protected.
6. Additional Diagrams
️· Input test waveform diagrams.
️· Maximum Negative/Positive Overshoot Waveform.
| Part No. | ACE25AC512G |
| Manufacturer | ACE |
| Size | 1Mb |
| Pages | 23 pages |
| Description | SPI NOR FLASH |
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