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Electronic Components Datasheet Search |
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Electronic Components Datasheet Search |
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DUE Datasheet, PDF |
| Searched Keyword : 'DUE' - Total: 148 (1/8) Pages |
| Manufacturer | Part # | Datasheet | Description |
 OSRAM GmbH |
Q65110A1791 | 
396Kb/21P |
Replacement in due course |
 STMicroelectronics |
AN1479 |
447Kb/13P |
Due to increasing consumer awareness |
 Ohmite Mfg. Co. |
RES-TGH |
429Kb/2P |
Due to their non-inductive design |
|
OSRAM GmbH |
LGL29K-G2J1-24-Z |
386Kb/20P |
Version 1.0 (Replacement in due course) |
 IXYS Corporation |
IXA20IF1200HB |
129Kb/6P |
Easy paralleling due to the positive temperature Easy paralleling due to the positive temperature |
|
OSRAM GmbH |
Q65110A1746 |
386Kb/20P |
Version 1.0 (Replacement in due course) |
 Stanson Technology |
STN4536 |
708Kb/6P |
Due N Channel Enhancement Mode MOSFET |
|
OSRAM GmbH |
LBL293 |
396Kb/21P |
Version 1.0 (Replacement in due course) |
|
IXYS Corporation |
IXA20I1200PB |
106Kb/4P |
Easy paralleling due to the positive temperature |
 Vishay Siliconix |
VLMW321 |
910Kb/10P |
Long life time, due to silicone casting Rev. 1.2, 25-Apr-13 |
|
OSRAM GmbH |
LSYT67B-R2S2-1-S2T2-26 |
429Kb/15P |
more light due to higher optical efficiency |
 IP SEMICONDUCTOR CO., L... |
IPT04Q08-TED |
228Kb/5P |
High current density due to double mesa technology |
| IPT08Q08-CEA |
214Kb/4P |
High current density due to double mesa technology | |
| IPT08Q08-CED |
215Kb/5P |
High current density due to double mesa technology | |
| IPT12Q08-CEF |
235Kb/4P |
High current density due to double mesa technology | |
| IPT20Q06-TEA |
208Kb/4P |
High current density due to double mesa technology | |
| IPT20Q08-TEA |
208Kb/4P |
High current density due to double mesa technology | |
| IPT0406-18F |
432Kb/4P |
High current density due to double mesa technology | |
| IPT0408-05D |
228Kb/5P |
High current density due to double mesa technology | |
| IPT0408-05I |
230Kb/4P |
High current density due to double mesa technology |
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