| Manufacturer | Part # | Datasheet | Description |
Siemens Semiconductor G...
|
BF1012W |
359Kb/3P |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
| KOM2125 |
241Kb/4P |
NEU: 2fach-Silizium-PIN-Fotodiode in SMT NEW: 2-Chip Silicon PIN Photodiode in SMT |
| 3NW7023 |
239Kb/5P |
SENTRON, cylindrical fuse holder, 10x38 mm, 2-pole, In: 32 A, Un AC: 690 V
06/08/2020 |
| 6ES7142-5AF00-0BA0 |
190Kb/3P |
SIMATIC ET 200AL, DQ 8x 24 V DC/2 A, 8x M12, Degree of protection IP67
7/9/2022 |
| MPD2545 |
438Kb/10P |
25 4-character, 5x7 dot matrix, X-Y stackable, HI-REL/Military Alphanumeric Programmable Display with Built-In CMOS Control Functions |
| BB669 |
13Kb/3P |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance) |
| 3LD2003-1TP53 |
307Kb/6P |
SENTRON, Switch disconnector 3LD, emergency switching-off switch, 3- pole, Iu: 16 A, operating power / at AC-23 A 400 V: 7.5 kW, front-mounted, 1 NC, 1 NO, rotary operating mechanism, Red / yellow, 4-hole mounting of the handle
12/13/2022 |
| BAR64-W |
48Kb/4P |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
| BAR64 |
89Kb/4P |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| BAR64-02W |
25Kb/4P |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
| BAR64-07 |
43Kb/3P |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| BFQ76 |
38Kb/4P |
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA.) |
| 3RF2310-1AA04 |
259Kb/6P |
SEMICOND. CONTACTOR 3RF2, 1-PH. AC 51 10 A 40 DEGREES C 48-460 V / 24 V DC SCREW TERMINAL |
| BB831 |
63Kb/3P |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units) |
| BFR183W |
56Kb/7P |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) |
| BB811 |
26Kb/2P |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units) |
| BFR183 |
56Kb/7P |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) |
| BFT93 |
58Kb/7P |
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) |
| BB689 |
13Kb/3P |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series inductance Low series resistance) |
| BFP183 |
60Kb/7P |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
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