| Manufacturer | Part # | Datasheet | Description |

California Eastern Labs
|
UPA863TD |
726Kb/27P |
NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD |
| PS7801J-1A |
219Kb/10P |
4-PIN ULTRA SMALL FLAT-LEAD, LOW C횞R 3pF • 廓 , 1-ch Optical Coupled MOS FET |
| PS7241-1B |
363Kb/12P |
4-PIN SOP 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch Optical Coupled MOS FET |
| PS7801C-1A |
337Kb/5P |
NECs 4-PIN ULTRA SMALL FLAT-LEAD SUPER LOW OUTPUT CAPACITANCE 1-ch OPTICAL COUPLED MOS FET |
| PS7241E-1B |
349Kb/14P |
4-PIN SOP 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch Optical Coupled MOS FET |
| PS7802-1A |
342Kb/14P |
4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE (1.6 pF), 1-ch Optical Coupled MOS FET |
| PS7801K-1A |
184Kb/10P |
4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE (1.6 pF), 1-ch Optical Coupled MOS FET |
| PS7801F-1A |
204Kb/10P |
4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE (0.9 pF) 1-ch Optical Coupled MOS FET |
| PS7801D-1A |
201Kb/13P |
4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE (0.6 pF) 1-ch Optical Coupled MOS FET |
| NX5322 |
190Kb/7P |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE |
| PS9905 |
11Mb/19P |
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 8-PIN LSDIP PHOTOCOUPLER FOR CREEPAGE DISTANCE OF 14.5 mm |
| NX5312 |
285Kb/7P |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE |
| NESG270034 |
349Kb/11P |
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) |
| NX6314EH |
903Kb/6P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS |
| NX8563LA |
399Kb/6P |
1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS |
| PS710A-1A |
352Kb/11P |
6-PIN DIP, 0.1 LOW ON-STATE RESISTANCE 1.8 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET |
| NX5321 |
190Kb/7P |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE |
| PS7801J-1A_V1 |
279Kb/14P |
4-PIN ULTRA SMALL FLAT-LEAD, LOW C 횞 R (3 pF ??廓) 1-ch Optical Coupled MOS FET |
| NX5310 |
293Kb/7P |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE |
| NX6410GH |
190Kb/7P |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. |