1..6 X 0..8 0..6MM Datasheet(PDF) - M58WR016KU - Numonyx B.V

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1..6 X 0..8 0..6MM Datasheet, PDF

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Searched Keyword : '1..6 X 0..8 0..6MM ' - Total: 35 (2/2) Pages

Manufacturer	Part #	Datasheet	Description
Numonyx B.V	M58WR016KU	2Mb/123P	16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
	M29DW323DT	1Mb/51P	32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
	M29W128GH70N3E	1Mb/94P	128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
	M58PR512LE	2Mb/123P	512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
	NAND01G-B2B	1Mb/60P	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
	M45PE10	990Kb/47P	1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface
	SMSXXXAF	1Mb/61P	64 MByte, 128 MByte, 256 MByte 512 MByte and 1 GByte, 3.3V Supply Secure Digital??Card
	NAND01GR3B2C	1Mb/67P	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory January 2010 Rev 5
	M29DW127G70NF6E	1Mb/95P	128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
	M45PE80	911Kb/47P	8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
	M25PE20	1Mb/64P	1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
	NAND04G-B2D	1Mb/69P	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
	M36W0R6040T1	441Kb/22P	64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 횞16) PSRAM, multi-chip package
	M39P0R9080E4	466Kb/23P	512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package
	M36W0R6040T3	468Kb/22P	64-Mbit (4 Mbits 횞16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 횞16) or 32-Mbit (2 Mbits x16) PSRAM MCP

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