| Manufacturer | Part # | Datasheet | Description |

ABLIC Inc.
|
S-1222B |
1Mb/65P |
28 V INPUT, 200 mA VOLTAGE REGULATOR Rev.2.1_00 |

Nexperia B.V. All right...
|
PMBT3904MB |
229Kb/11P |
40 V, 200 mA NPN switching transistor |
| BAT854W |
188Kb/8P |
40 V, 200 mA Schottky barrier diode 4 January 2023 |
| 1PS76SB21-Q |
190Kb/10P |
40 V, 200 mA Schottky barrier diode 25 July 2022 |
| PEMB3 |
202Kb/10P |
50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open 28 December 2022 |

Schneider Electric
|
XZBWR2STT24 |
94Kb/2P |
programmable receiver - 4 PNP - 200 mA - 24 V DC - 2 pusbuttons - 6 LEDs |

ON Semiconductor
|
BSS84LT1 |
67Kb/4P |
Power MOSFET 130 mA, 50 V June, 2004 ??Rev. 5 |

Nexperia B.V. All right...
|
PUMB3H |
240Kb/12P |
50 V, 100 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open 22 March 2021 |
| PUMB3H-Q |
240Kb/12P |
50 V, 100 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open 6 May 2021 |

SeCoS Halbleitertechnol...
|
MMBT3904 |
1Mb/6P |
200 mA, 40 V NPN Plastic Encapsulated Transistor |

Nexperia B.V. All right...
|
BAT721C-Q |
192Kb/8P |
40 V, 200 mA Schottky barrier dual diode 3 May 2023 |
| BAT854SW |
189Kb/8P |
40 V, 200 mA Schottky barrier dual diode 4 January 2023 |
| PMBT3904VS |
231Kb/10P |
40 V, 200 mA NPN/NPN switching transistor 28 December 2022 |

NXP Semiconductors
|
NX3008PBKT |
879Kb/16P |
30 V, 200 mA P-channel Trench MOSFET Rev. 1-1 August 2011 |

Nexperia B.V. All right...
|
BAT721A-Q |
193Kb/8P |
40 V, 200 mA Schottky barrier dual diode 24 November 2022 |
| BAT854SW-Q |
188Kb/8P |
40 V, 200 mA Schottky barrier dual diode 4 January 2023 |
| BAT721S-Q |
192Kb/8P |
40 V, 200 mA Schottky barrier dual diode 3 May 2023 |
| BAT721S |
193Kb/8P |
40 V, 200 mA Schottky barrier dual diode 17 October 2022 |

NXP Semiconductors
|
NX3008PBKW |
883Kb/16P |
30 V, 200 mA P-channel Trench MOSFET Rev. 1-1 August 2011 |

Nexperia B.V. All right...
|
PMBT3904RA |
252Kb/13P |
40 V, 200 mA double NPN switching transistor 13 September 2018 |