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HMN1288D Datasheet (PDF) - List of Unclassifed Manufacturers

HMN1288D Datasheet PDF - List of Unclassifed Manufacturers
Part # HMN1288D
Download  HMN1288D Download

File Size   168.24 Kbytes
Page   9 Pages
Manufacturer  ETC [List of Unclassifed Manufacturers]
Direct Link  
Logo ETC - List of Unclassifed Manufacturers
Description Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit), 32Pin-DIP, 5V

HMN1288D Datasheet (PDF)

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HMN1288D Datasheet PDF - List of Unclassifed Manufacturers

Part # HMN1288D
Download  HMN1288D Click to download

File Size   168.24 Kbytes
Page   9 Pages
Manufacturer  ETC [List of Unclassifed Manufacturers]
Direct Link  
Logo ETC - List of Unclassifed Manufacturers
Description Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit), 32Pin-DIP, 5V

HMN1288D Datasheet (HTML) - List of Unclassifed Manufacturers

HMN1288D Datasheet HTML 1Page - List of Unclassifed Manufacturers HMN1288D Datasheet HTML 2Page - List of Unclassifed Manufacturers HMN1288D Datasheet HTML 3Page - List of Unclassifed Manufacturers HMN1288D Datasheet HTML 4Page - List of Unclassifed Manufacturers HMN1288D Datasheet HTML 5Page - List of Unclassifed Manufacturers HMN1288D Datasheet HTML 6Page - List of Unclassifed Manufacturers HMN1288D Datasheet HTML 7Page - List of Unclassifed Manufacturers HMN1288D Datasheet HTML 8Page - List of Unclassifed Manufacturers HMN1288D Datasheet HTML 9Page - List of Unclassifed Manufacturers

HMN1288D Product details

[HANBIT]

GENERAL DESCRIPTION
The HMN1288D Nonvolatile SRAM is a 1,048,576-bit static RAM organized as 131,072 bytes by 8 bits. The HMN1288D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of standard SRAM and integral control circuitry, which constantly monitors the single 5V, supply for an out-oftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid.
The HMN1288D uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

FEATURES
♦ Access time : 70, 85, 120, 150 ns
♦ High-density design : 1Mbit Design
♦ Battery internally isolated until power is applied
♦ Industry-standard 32-pin 128K x 8 pinout
♦ Unlimited write cycles
♦ Data retention in the absence of VCC
♦ 10-years minimum data retention in absence of power
♦ Automatic write-protection during power-up/power-down cycles
♦ Data is automatically protected during power loss
♦ Conventional SRAM operation; unlimited write cycles




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