PTFB182503FL Datasheet(PDF) - Cree, Inc

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PTFB182503FL Datasheet (PDF) - Cree, Inc

PTFB182503FL Datasheet PDF - Cree, Inc


Part #	PTFB182503FL

Download	PTFB182503FL Download

File Size	497.38 Kbytes

Page	11 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Description

Thermally-Enhanced High Power RF LDMOS FET 240 W, 1805 ??1880 MHz

PTFB182503FL Datasheet (PDF)

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PTFB182503FL Datasheet PDF - Cree, Inc


Part #	PTFB182503FL

Download	PTFB182503FL Click to download

File Size	497.38 Kbytes

Page	11 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

Logo

Description	Thermally-Enhanced High Power RF LDMOS FET 240 W, 1805 ??1880 MHz

PTFB182503FL Datasheet (HTML) - Cree, Inc

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Similar Part No. - PTFB182503FL

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFB182503FL	721Kb / 12P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz Rev. 06, 2010-11-09
	PTFB182503FL	694Kb / 12P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 07.2, 2016-06-10
	PTFB182503FLV2R0	694Kb / 12P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 07.2, 2016-06-10
	PTFB182503FLV2R0XTMA1	694Kb / 12P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 07.2, 2016-06-10
	PTFB182503FLV2R250	694Kb / 12P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 07.2, 2016-06-10

Similar Description - PTFB182503FL

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFB182503EL	721Kb / 12P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz Rev. 06, 2010-11-09
Infineon Technologies A...	PTFA182001E	260Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz Rev. 01, 2008-03-12
Cree, Inc	PXAC182908FV	515Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1805 ??1880 MHz
Infineon Technologies A...	PTFA181001GL	412Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz Rev. 03, 2009-04-01
Infineon Technologies A...	PXAC182002FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17
Cree, Inc	PXAE184408NB	1Mb / 6P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz
Cree, Inc	PXAC182002FC	495Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
Infineon Technologies A...	PXAD184218FV	339Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2016-12-07
	PTFA181001GL	325Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ??1880 MHz Rev. 01, 2008-06-15
	PTFA181001E	408Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ??1880 MHz Rev. 02.1, 2009-02-20

About Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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