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TGF2021-01 Datasheet (PDF) - TriQuint Semiconductor

TGF2021-01 Datasheet PDF - TriQuint Semiconductor
Part # TGF2021-01
Download  TGF2021-01 Download

File Size   166.81 Kbytes
Page   8 Pages
Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor
Description DC-12 GHz Discrete Power pHEMT

TGF2021-01 Datasheet (PDF)

Go To PDF Page Download Datasheet
TGF2021-01 Datasheet PDF - TriQuint Semiconductor

Part # TGF2021-01
Download  TGF2021-01 Click to download

File Size   166.81 Kbytes
Page   8 Pages
Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor
Description DC-12 GHz Discrete Power pHEMT

TGF2021-01 Datasheet (HTML) - TriQuint Semiconductor

TGF2021-01 Datasheet HTML 1Page - TriQuint Semiconductor TGF2021-01 Datasheet HTML 2Page - TriQuint Semiconductor TGF2021-01 Datasheet HTML 3Page - TriQuint Semiconductor TGF2021-01 Datasheet HTML 4Page - TriQuint Semiconductor TGF2021-01 Datasheet HTML 5Page - TriQuint Semiconductor TGF2021-01 Datasheet HTML 6Page - TriQuint Semiconductor TGF2021-01 Datasheet HTML 7Page - TriQuint Semiconductor TGF2021-01 Datasheet HTML 8Page - TriQuint Semiconductor

TGF2021-01 Product details

Product Description
The TriQuint TGF2021-01 is a discrete 1 mm pHEMT which operates from DC-12 GHz. The TGF2021-01 is designed using TriQuint’s proven standard 0.35um power pHEMT production process.
The TGF2021-01 typically provides > 30 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-01 appropriate for high efficiency applications.
The TGF2021-01 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications.
The TGF2021-01 has a protective surface passivation layer providing environmental robustness.

Key Features and Performance
• Frequency Range: DC - 12 GHz
• > 30 dBm Nominal Psat
• 59% Maximum PAE
• 11 dB Nominal Power Gain
• Suitable for high reliability applications
• 1mm x 0.35 m Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 75-125mA
   (Under RF Drive, Id rises from 75mA to 240mA)
• Chip Dimensions: 0.57 x 0.53 x 0.10 mm
                                (0.022 x 0.021 x 0.004 in)

Primary Applications
• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications




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