GTVA212701FA Datasheet(PDF) - Cree, Inc

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GTVA212701FA Datasheet (PDF) - Cree, Inc

GTVA212701FA Datasheet PDF - Cree, Inc


Part #	GTVA212701FA

Download	GTVA212701FA Download

File Size	434.0 Kbytes

Page	8 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Description

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz

GTVA212701FA Datasheet (PDF)

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GTVA212701FA Datasheet PDF - Cree, Inc


Part #	GTVA212701FA

Download	GTVA212701FA Click to download

File Size	434.0 Kbytes

Page	8 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

Logo

Description	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz

GTVA212701FA Datasheet (HTML) - Cree, Inc

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Similar Part No. - GTVA212701FA

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	GTVA212701FA	566Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27
	GTVA212701FA-V2-R0	566Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27
	GTVA212701FA-V2-R2	566Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27

Similar Description - GTVA212701FA

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	GTVA212701FA	566Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27
	GTRA214602FC-V1	522Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz Rev. 02.1, 2022-1-27
	GTVA262701FA_V2	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
Cree, Inc	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27
	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
	GTRA262802FC	515Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Rev. 03.3, 2022-1-27

About Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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