Features
• 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8
- Virtually unlimited endurance of 10 trillion (1013) read/write cycles
- 121-year data retention (see Data retention and endurance)
- Infineon no delay technology writes
- Advanced high-reliability ferroelectric process
• Fast serial peripheral interface (SPI)
- Up to 50 MHz frequency
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme
- Hardware protection using the Write Protect (WP) pin
- Software protection using Write Disable (WRDI) instruction
- Software block protection for 1/4, 1/2, or entire array
• Device ID and Serial number
- Device ID includes manufacturer ID and product ID
- Unique ID
- Serial number
• Dedicated 256-byte special sector F-RAM
- Dedicated special sector write and read
- Stored content can survive up to 3 standard reflow soldering cycles
• Low-power consumption
- 3.7 mA (typ) active current at 40 MHz
- 2.7 μA (typ) standby current
- 1.1 μA (typ) Deep Power Down mode current
- 0.1 μA (typ) Hibernate mode current
• Low-voltage operation:
- CY15V102QN: VDD = 1.71 V to 1.89 V
- CY15B102QN: VDD = 1.8 V to 3.6 V
• Automotive operating temperature: –40°C to +125°C
• AEC-Q100 Grade 1 compliant
• 8-pin Small Outline Integrated Circuit (SOIC) package
• Restriction of hazardous substances (RoHS) compliant