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IDT74ALVCH374SO Datasheet (PDF) - Integrated Device Technology
IDT74ALVCH374SO Datasheet PDF - Integrated Device Technology
Part # IDT74ALVCH374SO
Download  IDT74ALVCH374SO Download

File Size   83.64 Kbytes
Page   6 Pages
Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology
Description 3.3V CMOS OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS AND BUS-HOLD

IDT74ALVCH374SO Datasheet (PDF)

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IDT74ALVCH374SO Datasheet PDF - Integrated Device Technology

Part # IDT74ALVCH374SO
Download  IDT74ALVCH374SO Click to download

File Size   83.64 Kbytes
Page   6 Pages
Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology
Description 3.3V CMOS OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS AND BUS-HOLD

IDT74ALVCH374SO Datasheet (HTML) - Integrated Device Technology

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About Integrated Device Technology

Integrated Device Technology (IDT) is an American company that specializes in the design and manufacture of mixed-signal semiconductor solutions.
The company was founded in 1980 and is headquartered in San Jose, California.
IDT provides a wide range of products including clock and timing solutions, memory interface, and digital logic products.
The company's products are used in various applications such as computing, telecommunications, and industrial automation.
IDT is known for its expertise in mixed-signal semiconductor technology and its ability to deliver high-quality and reliable products to its customers.
The company has operations and facilities in various countries across the world and works closely with its customers to provide customized semiconductor solutions that meet their specific requirements and needs.
In addition to its core business, IDT also provides solutions for the automotive, data center, and Internet of Things (IoT) markets.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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